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2SB1393A_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # 2SB1393A_2014
Description  Silicon PNP Power Transistors
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

2SB1393A_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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JMnic
Product Specification
2
Silicon PNP Power Transistors
2SB1393 2SB1393A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SB1393
-60
V(BR)CEO
Collector-emitter
breakdown voltage
2SB1393A
IC=-30mA , IB=0
-80
V
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.375A
-1.2
V
VBE
Base-emitter voltage
VCE=-4V; IC=-3A
-1.8
V
2SB1393
VCE=-60V ;VBE=0
ICES
Collector
cut-off current
2SB1393A
VCE=-80V; VBE=0
-200
μA
2SB1393
VCE=-30V; IB=0
ICEO
Collector
cut-off current
2SB1393A
VCE=-60V; IB=0
-300
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-1A ; VCE=-4V
70
250
hFE-2
DC current gain
IC=-3A ; VCE=-4V
10
fT
Transition frequency
IC=-0.1A; VCE=-5V;f=1MHz
20
MHz
Switching times
ton
Turn-on time
0.5
μs
ts
Storage time
1.2
μs
tf
Fall time
IC=-1A ;IB1=-0.1A
IB2=0.1A;VCC=-50V
0.3
μs
hFE-1 Classifications
Q
P
70-150
120-250


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