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H2N6427 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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H2N6427 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
1 / 3 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 HSMC Product Specification H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25 °C) ............................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 40 V VCES Collector to Emitter Voltage...................................................................................... 40 V VEBO Emitter to Base Voltage ........................................................................................... 12 V IC Collector Current ...................................................................................................... 500 mA Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V IC=100uA, IE=0 BVCES 40 - - V IC=10uA, IB=0 BVEBO 12 - - V IE=10uA, IC=0 ICBO - - 50 nA VCB=30V, IE=0 IEBO - - 50 nA VEB=10V, IC=0 ICES - - 1 uA VCE=25V, VBE=0 *VCE(sat)1 - 0.71 1.2 V IC=50mA, IB=0.5mA *VCE(sat)2 - 0.9 1.5 V IC=500mA, IB=0.5mA *VBE(sat) - 1.52 2.0 V IC=500mA, IB=0.5mA, VBE(on) - 1.24 1.75 V VCE=5V, IC=50mA *hFE1 10 - 100 K VCE=5V, IC=10mA *hFE2 20 - 200 K VCE=5V, IC=100mA *hFE3 14 - 140 K VCE=5V, IC=500mA Cob - 5.4 7 pF VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% |
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