HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6274-B

Issued Date : 1994.11.18

Revised Date : 2000.09.15

Page No. : 1/3

HSMC Product Specification

H2N6427

NPN EPITAXIAL PLANAR TRANSISTOR

Description

Darlington Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 40 V

VCES Collector to Emitter Voltage...................................................................................... 40 V

VEBO Emitter to Base Voltage ........................................................................................... 12 V

IC Collector Current ...................................................................................................... 500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA, IE=0

BVCES

40

-

-

V

IC=10uA, IB=0

BVEBO

12

-

-

V

IE=10uA, IC=0

ICBO

-

-

50

nA

VCB=30V, IE=0

IEBO

-

-

50

nA

VEB=10V, IC=0

ICES

-

-

1

uA

VCE=25V, VBE=0

*VCE(sat)1

-

0.71

1.2

V

IC=50mA, IB=0.5mA

*VCE(sat)2

-

0.9

1.5

V

IC=500mA, IB=0.5mA

*VBE(sat)

-

1.52

2.0

V

IC=500mA, IB=0.5mA,

VBE(on)

-

1.24

1.75

V

VCE=5V, IC=50mA

*hFE1

10

-

100

K

VCE=5V, IC=10mA

*hFE2

20

-

200

K

VCE=5V, IC=100mA

*hFE3

14

-

140

K

VCE=5V, IC=500mA

Cob

-

5.4

7

pF

VCB=10V, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%