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NTD4809NAT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD4809NAT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTD4809NA http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction-to-Case (Drain) RqJC 2.9 °C/W Junction-to-T AB (Drain) RqJC- TAB 3.5 Junction-to-Ambient - Steady State (Note 1) RqJA 74 Junction-to-Ambient - Steady State (Note 2) RqJA 116 1. Surface-mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 25 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 mA TJ = 125°C 10 Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.7 mV/ °C Drain-to-Source On Resistance RDS(on) VGS = 10 to 11.5 V ID = 30 A 7.0 9.0 m W ID = 15 A 7.0 VGS = 4.5 V ID = 30 A 12 14 ID = 15 A 11 Forward Transconductance gFS VDS = 15 V, ID = 15 A 9.0 S CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 12 V 1456 pF Output Capacitance Coss 315 Reverse Transfer Capacitance Crss 200 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 30 A 11 13 nC Threshold Gate Charge QG(TH) 2.5 Gate-to-Source Charge QGS 4.8 Gate-to-Drain Charge QGD 5.0 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V, ID = 30 A 25 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time td(on) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 12.3 ns Rise Time tr 21.3 Turn-Of f Delay Time td(off) 15.1 Fall Time tf 5.3 Turn-On Delay Time td(on) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 7.0 ns Rise Time tr 22.7 Turn-Of f Delay Time td(off) 25.3 Fall Time tf 2.8 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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