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2N7640-GA Datasheet(PDF) 8 Page - GeneSiC Semiconductor, Inc. |
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2N7640-GA Datasheet(HTML) 8 Page - GeneSiC Semiconductor, Inc. |
8 / 10 page 2N7640-GA Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Pg 8 of 9 C: Proportional Gate Current Driving A proportional gate drive topology may be beneficial for applications in which the 2N7640-GA will operate over a wide range of drain current conditions to lower the gate drive power consumption. A proportional gate driver relies on instantaneous drain current ID feedback to vary the steady state gate current IG,steady supplied to the 2N7640-GA. C:1: Voltage Controlled Proportional Driver A voltage controlled proportional driver relies on a gate drive integrated circuit to detect the 2N7640-GA drain-source voltage VDS during on- state to sense ID. The integrated circuit will then increase or decrease IG in response to ID. This allows IG and gate drive power consumption to reduce while ID is low or for IG to increase when ID increases. A high voltage diode connected between the drain and sense protects the integrated circuit from high-voltage when blocking. A simplified version of this topology is shown in Figure 21. Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/. Figure 21: Simplified Voltage Controlled Proportional Driver C:2: Current Controlled Proportional Driver The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback of the 2N7640-GA drain current during on-state to supply IG,steady into the gate. IG,steady will increase or decrease in response to ID at a fixed forced current gain which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. 2N7640-GA is initially tuned-on using a gate current pulse supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady and the gate drive power consumption to reduce while ID is relatively low or for IG,steady to increase when ID increases. A simplified version of this topology is shown in Figure 22. Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/. Figure 22: Simplified Current Controlled Proportional Driver SiC SJT Proportional Gate Current Driver D S G Gate Signal IG,steady HV Diode Sense Signal Output SiC SJT D S G N2 N2 N1 N3 Gate Signal |
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