2N6385 datasheet(1/2 Pages) MICROSEMI

Part #	2N6385

Description	NPN DARLINGTON POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

NPN DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/523

Devices

Qualified Level

2N6383

2N6384

2N6385

JAN, JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol 2N6383 2N6384 2N6385 Unit

Collector-Emitter Voltage

VCEO

40

60

80

Vdc

Collector-Base Voltage

VCBO

40

60

80

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Base Current

IB

0.25

Adc

Collector Current

IC

10

Adc

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

6.0

100

W

Operating & Storage Temperature

Top, Tstg

-55 to +175

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance Junction-to-Case

RθJC

1.75

0C/W

1)

Derate linearly 34.2 mW/

0C above TA > +250C

2)

Derate linearly 571 mW/

0C above TC > +250C

TO-3* (TO-204AA)

*See Appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TC = +25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 200 mAdc

2N6383

2N6384

2N6385

V(BR)CEO

40

60

80

Vdc

Collector-Emitter Breakdown Voltage

IC = 200 mAdc, RBB = 100 Ω

2N6383

2N6384

2N6385

V(BR)CER

40

60

80

Vdc

Collector-Base Cutoff Current

VCE = 40 Vdc

2N6383

VCE = 60 Vdc

2N6384

VCE = 80 Vdc

2N6385

ICBO

1.0

mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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