GA05JT12-247

Nov 2014

http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/

Pg1 of 11

S

D

G

Normally – OFF Silicon Carbide

Junction Transistor

Features

Package

 175 °C Maximum Operating Temperature

 Gate Oxide Free SiC Switch

 Exceptional Safe Operating Area

 Excellent Gain Linearity

 Temperature Independent Switching Performance

 Low Output Capacitance

 Suitable for Connecting an Anti-parallel Diode

 RoHS Compliant

TO-247

 

Advantages

Applications

 Compatible with Si MOSFET/IGBT Gate Drive ICs

 > 20 µs Short-Circuit Withstand Capability

 Lowest-in-class Conduction Losses

 High Circuit Efficiency

 Minimal Input Signal Distortion

 High Amplifier Bandwidth

 Down Hole Oil Drilling, Geothermal Instrumentation

 Hybrid Electric Vehicles (HEV)

 Solar Inverters

 Switched-Mode Power Supply (SMPS)

 Power Factor Correction (PFC)

 Induction Heating

 Uninterruptible Power Supply (UPS)

 Motor Drives

Table of Contents

Section I: Absolute Maximum Ratings

Parameter

Symbol

Conditions

Value

Unit

Notes

Drain – Source Voltage

1200

V

Continuous Drain Current

15

A

Fig. 17

Continuous Drain Current

5

A

Fig. 17

Continuous Gate Current

0.2

A

Turn-Off Safe Operating Area

RBSOA

Clamped Inductive Load

A

Fig. 19

Short Circuit Safe Operating Area

SCSOA

Non Repetitive

> 20

µs

Reverse Gate – Source Voltage

30

V

Reverse Drain – Source Voltage

25

V

Power Dissipation

106 / 10

W

Fig. 16

Storage Temperature

-55 to 175

°C

S

G

D

D

=

1200 V

=

210 mΩ

=

15 A

=

5 A

=

80