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GA10SICP12-247 Datasheet(PDF) 2 Page - GeneSiC Semiconductor, Inc. |
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GA10SICP12-247 Datasheet(HTML) 2 Page - GeneSiC Semiconductor, Inc. |
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2 / 9 page  GA10SICP12-247 Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg2 of 8 Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. SJT On-State Characteristics Drain – Source On Resistance RDS(ON) ID = 10 A, IG = 200 mA, Tj = 25 °C 120 mΩ ID = 10 A, IG = 400 mA, Tj = 125 °C 150 ID = 10 A, IG = 800 mA, Tj = 175 °C 220 Gate Forward Voltage VGS(FWD) IG = 500 mA, Tj = 25 °C 3.3 V IG = 500 mA, Tj = 175 °C 3.1 DC Current Gain hFE VDS = 5 V, ID = 10 A, Tj = 25 °C VDS = 5 V, ID = 10 A, Tj = 175 °C 100 TBD SJT Off-State Characteristics Drain Leakage Current IDSS VR = 1200 V, VGS = 0 V, Tj = 25 °C VR = 1200 V, VGS = 0 V, Tj = 125 °C 350 530 nA VR = 1200 V, VGS = 0 V, Tj = 175 °C 700 Gate Leakage Current ISG VSG = 20 V, Tj = 25 °C 20 nA SJT Capacitance Characteristics Input Capacitance Ciss VGS = 0 V, VD = 1 V, f = 1 MHz tbd pF Reverse Transfer/Output Capacitance Crss/Coss VD = 1 V, f = 1 MHz tbd pF SJT Switching Characteristics Turn On Delay Time td(on) VDD = 800 V, ID = 10 A, RG(on) = RG(off) = tbd Ω, FWD = GB10SLT12, Tj = 25 ºC Refer to Figure 15 for gate current waveform tbd ns Rise Time tr tbd ns Turn Off Delay Time td(off) tbd ns Fall Time tf tbd ns Turn-On Energy Per Pulse Eon tbd µJ Turn-Off Energy Per Pulse Eoff tbd µJ Total Switching Energy Ets tbd µJ Turn On Delay Time td(on) VDD = 800 V, ID = 10 A, RG(on) = RG(off) = tbd Ω, FWD = GB10SLT12, Tj = 175 ºC Refer to Figure 15 for gate current waveform tbd Rise Time tr tbd ns Turn Off Delay Time td(off) tbd ns Fall Time tf tbd ns Turn-On Energy Per Pulse Eon tbd µJ Turn-Off Energy Per Pulse Eoff tbd µJ Total Switching Energy Ets tbd µJ Free-wheeling Silicon Carbide Schottky Diode Forward Voltage VF IF = 10 A, VGE = 0 V, Tj = 25 ºC (175 ºC ) 1.55 V Diode Knee Voltage VD(knee) Tj = 25 ºC, IF = 1 mA 0.8 V Peak Reverse Recovery Current Irrm IF = 10 A, VGE = 0 V, VR = 800 V, -dIF/dt = 625 A/µs, Tj = 175 ºC tbd A Reverse Recovery Time trr tbd ns Rise Time tr VDD= 800 V, ID = 10 A, Rgon = Rgoff = tbd Ω, Tj= 25 ºC tbd ns Fall Time tf tbd ns Turn-On Energy Loss Per Pulse Eon tbd μJ Turn-Off Energy Loss Per Pulse Eoff tbd μJ Reverse Recovery Charge Qrr tbd nC Rise Time tr VDD= 800 V, ID = 10 A, Rgon = Rgoff = tbd Ω, Tj= 175 ºC tbd ns Fall Time tf tbd ns Turn-On Energy Loss Per Pulse Eon tbd μJ Turn-Off Energy Loss Per Pulse Eoff tbd μJ Reverse Recovery Charge Qrr tbd nC |
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