Isolated Gate Driver

GA15IDDJT22-FR4

Sep 2014

Pg1 of 5

Gate Driver for SiC SJT with Output

and Signal Isolation

Features

Package

 Requires single 12 V voltage supply

 Two-voltage level topology with low drive losses

 High-side drive capable with 2200 V min. supply isolation

 6000 V Signal Isolation (up to 10 s)

 Capable of high Gate Currents with 3 W Maximum Power

 RoHS Compliant

 

Suitable for driving

 GA50JT12-247

 GA50JT12-247

 GA50SICP12-227

 GA100SICP12-227

Gate Drive Theory of Operation

The SJT transistor is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal

gate current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 1.

Figure 1: Idealized Gate Current Waveform

,

junction, when high drain currents begin to flow through the device. The applied gate voltage should be maintained high enough, above the

order to speed up the turn-off transition.

=

2200 V

=

15 W

=

> 3 W

=

TBD