Electronic Components Datasheet Search |
|
GA16JT17-247 Datasheet(PDF) 2 Page - GeneSiC Semiconductor, Inc. |
|
GA16JT17-247 Datasheet(HTML) 2 Page - GeneSiC Semiconductor, Inc. |
2 / 12 page GA16JT17-247 Nov 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg2 of 11 Section II: Static Electrical Characteristics A: On State B: Off State C: Thermal Section III: Dynamic Electrical Characteristics A: Capacitance and Gate Charge B: Switching 1 1 – All times are relative to the Drain-Source Voltage VDS Parameter Symbol Conditions Value Unit Notes Min. Typical Max. Drain – Source On Resistance RDS(ON) ID = 16 A, Tj = 25 °C ID = 16 A, Tj = 125 °C ID = 16 A, Tj = 175 °C 65 89 116 mΩ Fig. 5 Gate – Source Saturation Voltage VGS,SAT ID = 16 A, ID/IG = 40, Tj = 25 °C ID = 16 A, ID/IG = 30, Tj = 175 °C 3.33 3.11 V Fig. 7 DC Current Gain hFE VDS = 5 V, ID = 16 A, Tj = 25 °C VDS = 5 V, ID = 16 A, Tj = 125 °C VDS = 5 V, ID = 16 A, Tj = 175 °C 80 50 43 – Fig. 5 Drain Leakage Current IDSS VDS = 1700 V, VGS = 0 V, Tj = 25 °C VDS = 1700 V, VGS = 0 V, Tj = 125 °C VDS = 1700 V, VGS = 0 V, Tj = 175 °C 0.1 0.1 1 μA Fig. 8 Gate Leakage Current ISG VSG = 20 V, Tj = 25 °C 20 nA Thermal resistance, junction - case RthJC 0.53 °C/W Fig. 20 Parameter Symbol Conditions Value Unit Notes Min. Typical Max. Input Capacitance Ciss VGS = 0 V, VDS = 1200 V, f = 1 MHz 3078 pF Fig. 9 Reverse Transfer/Output Capacitance Crss/Coss VDS = 1200 V, f = 1 MHz 51 pF Fig. 9 Output Capacitance Stored Energy EOSS VGS = 0 V, VDS = 1200 V, f = 1 MHz 37 µJ Fig. 10 Effective Output Capacitance, time related Coss,tr ID = constant, VGS = 0 V, VDS = 0…1200 V 85 pF Effective Output Capacitance, energy related Coss,er VGS = 0 V, VDS = 0…1200 V 62 pF Gate-Source Charge QGS VGS = -5…3 V 23 nC Gate-Drain Charge QGD VGS = 0 V, VDS = 0…1200 V 103 nC Gate Charge - Total QG 126 nC Internal Gate Resistance – zero bias RG(INT-ZERO) f = 1 MHz, VAC = 50 mV, VDS = 0 V, VGS = 0 V, Tj = 175 ºC 1.7 Ω Internal Gate Resistance – ON RG(INT-ON) VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC 0.13 Ω Turn On Delay Time td(on) Tj = 25 ºC, VDS = 1200 V, ID = 16 A, Resistive Load Refer to Section V for additional driving information. 32 ns Fall Time, VDS tf 28 ns Fig. 11, 13 Turn Off Delay Time td(off) 26 ns Rise Time, VDS tr 20 ns Fig. 12, 14 Turn On Delay Time td(on) Tj = 175 ºC, VDS = 1200 V, ID = 16 A, Resistive Load 27 ns Fall Time, VDS tf 27 ns Fig. 11 Turn Off Delay Time td(off) 34 ns Rise Time, VDS tr 18 ns Fig. 12 Turn-On Energy Per Pulse Eon Tj = 25 ºC, VDS = 1200 V, ID = 16 A, Inductive Load Refer to Section V. 723 µJ Fig. 11, 13 Turn-Off Energy Per Pulse Eoff 57 µJ Fig. 12, 14 Total Switching Energy Etot 780 µJ Turn-On Energy Per Pulse Eon Tj = 175 ºC, VDS = 1200 V, ID = 16 A, Inductive Load 685 µJ Fig. 11 Turn-Off Energy Per Pulse Eoff 25 µJ Fig. 12 Total Switching Energy Etot 710 µJ |
Similar Part No. - GA16JT17-247 |
|
Similar Description - GA16JT17-247 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |