GA20JT06-CAL datasheet(1/7 Pages) GENESIC

Part #	GA20JT06-CAL

Description	Normally ??OFF Silicon Carbide Junction Transistor

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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Die Datasheet

GA20JT06-CAL

August 2014

http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/

Pg1 of 6

Normally – OFF Silicon Carbide

Junction Transistor

Features

 250°C maximum operating temperature

 Gate Oxide Free SiC switch

 Exceptional Safe Operating Area

 Excellent Gain Linearity

 Temperature Independent Switching Performance

 Low Output Capacitance

 Positive Temperature Co-efficient of RDS,ON

 Suitable for connecting an anti-parallel diode

Advantages

Applications

 Compatible with Si MOSFET/IGBT gate-drivers

 > 20 µs Short-Withstand Capability

 Lowest-in-class Conduction Losses

 High Circuit Efficiency

 Minimal Input Signal Distortion

 High Amplifier Bandwidth

 Down Hole Oil Drilling, Geothermal Instrumentation

 Hybrid Electric Vehicles (HEV)

 Solar Inverters

 Switched-Mode Power Supply (SMPS)

 Power Factor Correction (PFC)

 Induction Heating

 Uninterruptible Power Supply (UPS)

 Motor Drives

Electrical Specifications

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Values

Unit

Drain – Source Voltage

VDS

VGS = 0 V

600

V

Continuous Drain Current

ID

TVJ < 250 °C

20

A

Gate Peak Current

IGM

10

A

Turn-Off Safe Operating Area

RBSOA

TVJ = 250

oC, IG = 1 A,

Clamped Inductive Load

ID,max = 20

@ VDS ≤ VDSmax

A

Short Circuit Safe Operating Area

SCSOA

TVJ = 250

oC, IG = 1 A, VDS = 400 V,

Non Repetitive

20

µs

Reverse Gate – Source Voltage

VGS

30

V

Reverse Drain – Source Voltage

VDS

40

V

Operating and Storage Temperature

Tj, Tstg

-55 to 250

°C

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

On Characteristics

Drain – Source On Resistance

RDS(ON)

ID = 20 A, IG = 400 mA, Tj = 25 °C

ID = 20 A, IG = 500 mA, Tj = 125 °C

ID = 20 A, IG = 1000 mA, Tj = 175 °C

ID = 20 A, IG = 1000 mA, Tj = 250 °C

65

90

mΩ

110

165

Gate Forward Voltage

VGS(FWD)

IG = 1000 mA, Tj = 25 °C

3.0

V

IG = 1000 mA, Tj = 250 °C

2.7

DC Current Gain

hFE

VDS = 5 V, ID = 20 A, Tj = 25 °C

VDS = 5 V, ID = 20 A, Tj = 125 °C

VDS = 5 V, ID = 20 A, Tj = 175 °C

VDS = 5 V, ID = 20 A, Tj = 250 °C

110

78

73

69

Off Characteristics

Drain Leakage Current

IDSS

VR = 600 V, VGS = 0 V, Tj = 25 °C

10

µA

VR = 600 V, VGS = 0 V, Tj = 250 °C

100

Gate – Source Leakage Current

IGSS

VGS = -20 V, Tj = 25 °C

20

nA

Capacitance Characteristics

Input Capacitance

Ciss

VGS = 0 V, VD = 100 V, f = 1 MHz

2500

pF

Reverse Transfer/Output Capacitance

Crss/Coss

VD = 100 V, f = 1 MHz

160

pF

VDS

=

600 V

RDS(ON)

=

65 mΩ

ID (Tc = 25°C) =

45 A

hFE(Tc = 25°C) =

110

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