GA50JT17-247

Dec 2014

http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/

Pg2 of 11

Section II: Static Electrical Characteristics

B: Off State

C: Thermal

Section III: Dynamic Electrical Characteristics

A: Capacitance and Gate Charge

B: Switching

1

DS

Parameter

Symbol

Conditions

Value

Unit

Notes

Min.

Typical

Max.

Drain

– Source On Resistance

20

25

38

49

28

mΩ

Fig. 5

Gate

– Source Saturation Voltage

3.42

3.23

V

Fig. 7

DC Current Gain

104

65

58

–

Fig. 5

Drain Leakage Current

1

1

1

20

μA

Fig. 8

Gate Leakage Current

20

nA

Thermal resistance, junction - case

0.26

°C/W

Fig. 20

Parameter

Symbol

Conditions

Value

Unit

Notes

Min.

Typical

Max.

Input Capacitance

7205

pF

Fig. 9

Reverse Transfer/Output Capacitance

120

pF

Fig. 9

Output Capacitance Stored Energy

86

µJ

Fig. 10

Effective Output Capacitance,

time related

194

pF

Effective Output Capacitance,

energy related

139

pF

Gate-Source Charge

55

nC

Gate-Drain Charge

233

nC

Gate Charge - Total

288

nC

Internal Gate Resistance

– zero bias

0.59

Ω

Internal Gate Resistance

– ON

0.09

Ω

Turn On Delay Time

Refer to Section V for additional

driving information.

55

ns

83

ns

Fig. 11, 13

Turn Off Delay Time

63

ns

29

ns

Fig. 12, 14

Turn On Delay Time

49

ns

88

ns

Fig. 11

Turn Off Delay Time

61

ns

28

ns

Fig. 12

Turn-On Energy Per Pulse

Refer to Section V.

4300

µJ

Fig. 11, 13

Turn-Off Energy Per Pulse

748

µJ

Fig. 12, 14

Total Switching Energy

5048

µJ

Turn-On Energy Per Pulse

4100

µJ

Fig. 11

Turn-Off Energy Per Pulse

731

µJ

Fig. 12

Total Switching Energy

4831

µJ