GB01SHT06-CAL datasheet(1/3 Pages) GENESIC

Part #	GB01SHT06-CAL

Description	Silicon Carbide Power Schottky Diode Chip

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Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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Electrical Datasheet*

GB01SHT06-CAL

April 2012

http://www.genesicsemi.com/index.php/hit-sic/baredie

Page 1 of 2

Silicon Carbide Power

Schottky Diode Chip

Features

 650 V Schottky rectifier

 250 °C maximum operating temperature

 Temperature independent switching behavior

 Superior surge current capability

 Positive temperature coefficient of VF

 Extremely fast switching speeds

 Superior figure of merit QC/IF

Maximum Ratings at Tj = 250 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Repetitive peak reverse voltage

VRRM

650

V

Continuous forward current

IF

TC ≤ 235 °C

1

A

RMS forward current

IF(RMS)

TC ≤ 235 °C

2

A

Operating and storage temperature

Tj , Tstg

-55 to 250

°C

Electrical Characteristics at Tj = 250 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Diode forward voltage

VF

IF = 1 A, Tj = 25 °C

1.5

V

IF = 1 A, Tj = 210 °C

2.3

Reverse current

IR

VR = 650 V, Tj = 25 °C

0.03

5

µA

VR = 650 V, Tj = 250 °C

1.7

20

Total capacitive charge

QC

IF ≤ IF,MAX

dIF/dt = 200 A/μs

Tj = 210 °C

VR = 400 V

7

nC

Switching time

ts

VR = 400 V

< 17

ns

Total capacitance

C

VR = 1 V, f = 1 MHz, Tj = 25 °C

76

pF

VR = 400 V, f = 1 MHz, Tj = 25 °C

12

VR = 800 V, f = 1 MHz, Tj = 25 °C

11

Thermal Characteristics

Thermal resistance, junction - case

RthJC

Assuming TO-276 package

3.55

°C/W

*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC

Semiconductor).

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