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MSS50 Datasheet(PDF) 2 Page - STMicroelectronics |
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MSS50 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page  Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Characteristics MSS40, MSS50 2/7 1 Characteristics Table 3. Absolute ratings (limiting values) Symbol Parameter Value Unit MSS40 MSS50 VDRM/VRRM Repetitive peak off-state voltage 1200 800 1200 V IT(RMS) RMS on-state current Tc = 80° C 55 A Tc = 85° C 70 ITSM Non repetitive surge peak on-state current tp = 16.7 ms Tj = 25° C 420 630 A tp = 20 ms 400 600 I2tI2t Value for fusing tp = 10 ms Tj = 25° C 800 1800 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125° C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125° C 4 A PG(AV) Average gate power dissipation Tj = 125° C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ° C VRGM Maximum peak reverse gate voltage 5 V Table 4. Electrical characteristics (Tj = 25° C, unless otherwise specified) Symbol Test Conditions Value Unit MSS40 MSS50 IGT VD = 12 V RL = 33 Ω MIN. 5 mA MAX. 50 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125° C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 80 mA IL IG = 1.2 IGT MAX. 120 mA dV/dt VD = 67 % VDRM Gate open Tj = 125° C MIN. 1000 V/µs VTM ITM = 80 A tp = 380 µs Tj = 25° C MAX. 1.7 V ITM = 100 A tp = 380 µs 1.7 Vt0 Threshold voltage Tj = 125° C MAX. 0.85 V Rd Dynamic resistance Tj = 125° C MAX. 11 7 m Ω IDRM IRRM VDRM = VRRM Tj = 25° C MAX. 20 µA Tj = 125° C 10 mA Table 5. Thermal reistances Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) MSS40 0.6 ° C/W MSS50 0.45 |
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