BF998_2015 datasheet(7/12 Pages) JMNIC

Part #	BF998_2015

Description	Silicon N-channel dual-gate MOS-FETs

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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7 / 12 page

1996 Aug 01

7

Philips Semiconductors

Product speciﬁcation

Silicon N-channel dual-gate MOS-FETs

BF998; BF998R

Fig.13 Input admittance as a function of the

frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC466

102

10

10 2

1

10

10 1

y is

(mS)

f (MHz)

b is

g is

Fig.14 Reverse transfer admittance and phase as a

function of frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC467

102

10

10 3

10 2

10

1

y rs

10 3

10

1

2

(

µS)

f (MHz)

rs

yrs

(deg)

rs

ϕ

Fig.15 Forward transfer admittance and phase as a

function of frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC468

102

10

1

10 2

10

1

10

2

y fs

(mS)

y fs

f (MHz)

(deg)

fs

ϕ

Fig.16 Output admittance as a function of the

frequency; typical values.

VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb =25 °C.

10 3

MGC469

102

10

10 1

10

1

10 2

yos

(mS)

f (MHz)

bos

gos

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BF998_2015 Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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