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BF1100WR_2015 Datasheet(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # BF1100WR_2015
Description  Dual-gate MOS-FET
Download  14 Pages
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF1100WR_2015 Datasheet(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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1995 Apr 25
10
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
Fig.22 Input admittance as a function of
frequency; typical values.
VDS = 12 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
handbook, halfpage
10 3
MLD185
102
10
10 1
10 2
10
1
y is
(mS)
f (MHz)
b is
g is
VDS = 12 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
Fig.23 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 3
MLD186
102
10
10 3
10 2
10
1
y rs
10 3
10
10
1
2
rs
(
µS)
f (MHz)
rs
yrs
(deg)
ϕ
ϕ
Fig.24 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 12 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
10 3
MLD187
102
10
1
10 2
10
1
10
10
2
y fs
(mS)
y fs
f (MHz)
fs
fs
(deg)
ϕ
ϕ
Fig.25 Output admittance as a function of
frequency; typical values.
VDS = 12 V; VG2 =4V.
ID = 10 mA; Tamb =25 °C.
handbook, halfpage
10 3
MLD188
102
10
10 1
10
1
10 2
yos
(mS)
f (MHz)
bos
gos


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