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BF1206F_2015 Datasheet(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1206F_2015 Datasheet(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 17 page BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 8 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET VDS(A) = 2.8 V; VGG = 2.8 V; ID(nom) = 4 mA; Tamb =25 °C. VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; fw = 50 MHz; funw = 60 MHz; ID(nom) = 4 mA; Tamb =25 °C. Fig 10. Amplifier A: typical gain reduction as a function of the AGC voltage; typical values Fig 11. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(A) = 270 kΩ; f = 50 MHz; Tamb =25 °C. Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values 001aad904 VAGC (V) 03 2 1 30 20 40 10 0 gain reduction (dB) 50 001aad905 gain reduction (dB) 060 40 20 90 100 110 Vunw (dB µV) 80 001aad906 gain reduction (dB) 060 40 20 2 3 1 4 5 ID (mA) 0 |
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