BF1206F_1

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 01 — 30 January 2006

8 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

Fig 10. Amplifier A: typical gain reduction as a function

of the AGC voltage; typical values

Fig 11. Amplifier A: unwanted voltage for 1 %

cross-modulation as a function of gain

reduction; typical values

Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values

001aad904

03

2

1

30

20

40

10

0

gain

reduction

(dB)

50

001aad905

gain reduction (dB)

060

40

20

90

100

110

(dB

µV)

80

001aad906

gain reduction (dB)

060

40

20

2

3

1

4

5

(mA)

0