BFG35_2015 datasheet(3/16 Pages) JMNIC

Part #	BFG35_2015

Description	NPN 4 GHz wideband transistor

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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3 / 16 page

1999 Aug 24

3

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFG35

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL =75 Ω; Tamb =25 °C

Vp =Vo at dim = −60 dB; fp = 795.25 MHz;

Vq =Vo −6 dB; fq = 803.25 MHz;

Vr =Vo −6 dB; fr = 805.25 MHz;

measured at f(p+q−r) = 793.25 MHz.

3. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL =75 Ω; Tamb =25 °C

Vp =Vo at dim = −60 dB; fp = 445.25 MHz;

Vq =Vo −6 dB; fq = 453.25 MHz;

Vr =Vo −6 dB; fr = 455.25 MHz;

measured at f(p+q−r) = 443.25 MHz.

4. IC = 60 mA; VCE = 10 V; RL =75 Ω;

Vp =Vq =Vo = 50 dBmV;

f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz.

5. IC = 60 mA; VCE = 10 V; RL =75 Ω;

Vp =Vq =VO = 50 dBmV;

f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts = 135 °C (note 1)

40

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =10V

−−

1

µA

hFE

DC current gain

IC = 100 mA; VCE =10V

25

70

−

Cc

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

2

−

pF

Ce

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

10

−

pF

Cre

feedback capacitance

IC = 0; VCE =10V; f=1MHz

−

1.2

−

pF

fT

transition frequency

IC = 100 mA; VCE =10V;

f = 500 MHz; Tamb =25 °C

−

4

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 100 mA; VCE =10V;

f = 500 MHz; Tamb =25 °C

−

15

−

dB

IC = 100 mA; VCE =10V;

f = 800 MHz; Tamb =25 °C

−

11

−

dB

Vo

output voltage

note 2

−

750

−

mV

note 3

−

800

−

mV

d2

second order intermodulation

distortion

note 4

−−55

−

dB

note 5

−−57

−

dB

G

UM

10

s

21

2

1s

11

2

–

() 1s

22

2

–

()

-------------------------------------------------------- dB.

log

=

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