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GB02SLT12-252 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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GB02SLT12-252 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 5 page  GB02SLT12-252 Aug 2014 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 4 PIN 1 PIN 2 CASE Silicon Carbide Power Schottky Diode Features Package 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF RoHS Compliant TO – 252 Advantages Applications Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage VRRM 1200 V Continuous forward current IF TC ≤ 160 °C 2 A RMS forward current IF(RMS) TC ≤ 160 °C 3 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms 18 A TC = 160 °C, tP = 10 ms 15 Non-repetitive peak forward current IF,max TC = 25 °C, tP = 10 µs 100 A I 2t value ∫i 2 dt TC = 25 °C, tP = 10 ms 1.6 A 2s TC = 160 °C, tP = 10 ms 1.1 Power dissipation Ptot TC = 25 °C 65 W Operating and storage temperature Tj , Tstg -55 to 175 °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage VF IF = 2 A, Tj = 25 °C 1.5 1.8 V IF = 2 A, Tj = 175 °C 2.6 3.0 Reverse current IR VR = 1200 V, Tj = 25 °C 5 50 µA VR = 1200 V, Tj = 175 °C 10 100 Total capacitive charge QC IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 9 nC VR = 960 V 14 Switching time ts VR = 400 V < 17 ns VR = 960 V Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 131 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 12 VR = 1000 V, f = 1 MHz, Tj = 25 °C 8 Thermal Characteristics Thermal resistance, junction - case RthJC 2.3 °C/W Mechanical Properties Mounting torque M 0.6 Nm 1 2 case VRRM = 1200 V IF (Tc = 25°C) = 5 A QC = 9 nC |
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