GB05SHT06-CAU

Sep 2013

http://www.genesicsemi.com/index.php/hit-sic/baredie

Page 1 of 1

 

 

SPICE Model Parameters

Copy the following code into a SPICE software program for simulation of the GB05SHT06-CAU device.

*

MODEL OF GeneSiC Semiconductor Inc.

*

*

$Revision:

1.0

$

*

$Date:

05-SEP-2013

$

*

*

GeneSiC Semiconductor Inc.

*

43670 Trade Center Place Ste. 155

*

Dulles, VA 20166

*

httphttp://www.genesicsemi.com/index.php/sic-products/schottky

*

*

COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.

*

ALL RIGHTS RESERVED

*

* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY

* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED

* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A

* PARTICULAR PURPOSE."

* Models accurate up to 2 times rated drain current.

*

* Start of GB05SHT06-CAU SPICE Model

*

.SUBCKT GB05SHT06 ANODE KATHODE

D1 ANODE KATHODE GB05SHT06_25C; Call the Schottky Diode Model

D2 ANODE KATHODE GB05SHT06_PIN; Call the PiN Diode Model

.MODEL GB05SHT06_25C D

+ IS

1.99E-17

RS

0.12463

+ N

1

IKF

569.082

+ EG

1.2

XTI

3

+ TRS1

0.0035

TRS2

3.87E-05

+ CJO

3.38E-10

VJ

0.41772

+ M

1.5479

FC

0.5

+ TT

1.00E-10

BV

800

+ IBV

1.00E-03

VPK

650

+ IAVE

5

TYPE

SiC_Schottky

+ MFG

GeneSiC_Semiconductor

.MODEL GB05SHT06_PIN D

+ IS

1.33E-10

RS

0.31147

+ N

5

IKF

0

+ EG

3.23

XTI

-10

+ FC

0.5

TT

0

+ BV

800

IBV

1.00E-03

+ VPK

650

IAVE

5

+ TYPE

SiC_PiN

.ENDS

*

* End of GB05SHT06-CAU SPICE Model