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GB20SHT06-CAL Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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GB20SHT06-CAL Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page Electrical Datasheet* GB20SHT06-CAL April 2012 http://www.genesicsemi.com/index.php/hit-sic/baredie Page 1 of 2 Silicon Carbide Power Schottky Diode Chip Features 650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage VRRM 650 V Continuous forward current IF TC ≤ 205 °C 20 A RMS forward current IF(RMS) TC ≤ 205 °C 35 A Operating and storage temperature Tj , Tstg -55 to 250 °C Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage VF IF = 20 A, Tj = 25 °C 1.67 V IF = 20 A, Tj = 210 °C 2.7 Reverse current IR VR = 650 V, Tj = 25 °C 0.34 5 µA VR = 650 V, Tj = 250 °C 32 150 Total capacitive charge QC IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 210 °C VR = 400 V 66 nC Switching time ts VR = 400 V < 49 ns Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 1107 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 103 VR = 800 V, f = 1 MHz, Tj = 25 °C 98 Thermal Characteristics Thermal resistance, junction - case RthJC Assuming TO-276 package 0.49 °C/W *For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC Semiconductor). |
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