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KBJ2501G Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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KBJ2501G Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 50 V - 400 V IO = 25 A Features • Ideal for printed circuit board KBJ Package • Not ESD Sensitive Parameter Symbol KBJ25005G KBJ2501G Unit • Types from 50 V to 400 V VRRM • Plastic material has Underwriters Laboratory Flammability Classification 94V-0 • Reliable, low cost construction utilizing molded plastic technique Conditions KBJ25005G thru KBJ2504G KBJ2504G KBJ2502G Maximum ratings at Tj = 25 °C, unless otherwise specified Single Phase Glass Passivated Silicon Bridge Rectifier • Low forward voltage drop, high current capability Parameter Symbol KBJ25005G KBJ2501G Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 125 -55 to 125 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol KBJ25005G KBJ2501G Unit 25 25 4.2 4.2 Peak forward surge current IFSM 350 350 A Maximum instantaneous forward voltage per leg 1.05 1.05 10 10 500 500 V Electrical characteristics at Tj = 25 °C, unless otherwise specified 4.2 Maximum average forward rectified current IO Ta = 25 °C Conditions -55 to 150 KBJ2504G 10 10 KBJ2502G Ta = 125 °C 1.05 1.05 500 Ta = 25 °C IF = 12.5 A Conditions KBJ2504G 200 140 KBJ2502G -55 to 150 -55 to 125 -55 to 125 μA Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Tc = 110 °C 25 200 VF 4.2 A 25 8.3 ms single sine-wave 350 350 500 Maximum reverse current at rated DC blocking voltage per leg IR 400 280 400 www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 |
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