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KBPC1504W Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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KBPC1504W Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 50 V - 400 V IO = 15 A Features KBPC-T/W Package Mechanical Data Parameter Symbol KBPC15005T/W KBPC1501T/W Unit R titi k lt V 50 100 V 400 KBPC15005T/W thru KBPC1504T/W KBPC1504T/W 200 KBPC1502T/W Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Polarity: Marked on case • Not ESD Sensitive • Silicon junction Mounting position: Hole for #10 screw • Types from 50 V to 400 V VRRM Single Phase Silicon Bridge Rectifier • High efficiency • Metal case Case: Mounted in the bridge encapsulation Conditions Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol KBPC15005T/W KBPC1501T/W Unit Maximum average forward rectified current IO 15 15 A Peak forward surge current IFSM 300 300 A Maximum instantaneous forward voltage per leg 1.1 1.1 55 500 500 Typical junction capacitance 1 Cj 300 300 pF Thermal characteristics Typical thermal resistance 2 R ΘJC 2.3 2.3 °C/W 1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C. 2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink 500 VF 1.1 1.1 KBPC1502T/W -55 to 150 Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Tc = 55 °C 15 15 8.3 ms half sine-wave 300 300 KBPC1504T/W -55 to 150 -55 to 150 400 280 400 200 Tc = 25 °C IF = 7.5 A Conditions 200 140 -55 to 150 Maximum DC reverse current at rated DC blocking voltage per leg IR Tc = 100 °C μA 5 300 300 2.3 2.3 5 V Electrical characteristics at Tc = 25 °C, unless otherwise specified 500 www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 |
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Similar Description - KBPC1504W |
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