Features

• High Surge Capability

D-67 Package

• Not ESD Sensitive

Parameter

Symbol

MBRH12020(R) MBRH12030(R)

Unit

Repetitive peak reverse

voltage

20

30

V

RMS reverse voltage

14

21

V

MBRH12020 thru MBRH12040R

MBRH12040(R)

35

25

MBRH12035(R)

Silicon Power

Schottky Diode

Conditions

40

28

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRH12020(R) MBRH12030(R)

Unit

Average forward current

(per pkg)

120

120

A

Maximum instantaneous

forward voltage

0.70

0.70

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction-

case

R

ΘJC

0.48

0.48

°C/W

30

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage

-55 to 150

MBRH12040(R)

11

Conditions

-55 to 150

MBRH12035(R)

0.48

0.48

0.70

0.70

30

120

2000

2000

-55 to 150

-55 to 150

40

35

120

A

10

10

Peak forward surge current

2000

2000

mA

V

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