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BFG135_2015 Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG135_2015 Datasheet(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
7 / 12 page 1995 Sep 13 7 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 Fig.8 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 900 mV; Tamb =25 °C; f(p+q−r) = 443.25 MHz. handbook, halfpage 20 120 45 70 65 MBB292 60 55 50 40 60 80 100 I (mA) C d (dB) im Fig.9 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 850 mV; Tamb =25 °C; f(p+q−r) = 793.25 MHz. handbook, halfpage 20 120 45 70 65 MBB293 60 55 50 40 60 80 100 I (mA) C d (dB) im Fig.10 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; Tamb =25 °C; f(p+q) = 450 MHz. handbook, halfpage 20 120 45 70 65 MBB291 60 55 50 40 60 80 100 d 2 (dB) I (mA) C Fig.11 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; Tamb =25 °C f(p+q) = 810 MHz. handbook, halfpage 20 120 45 70 65 MBB290 60 55 50 40 60 80 100 d 2 (dB) I (mA) C |
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