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BFG310W_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG310W_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 12 page 9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 2 of 12 Philips Semiconductors BFG310W/XR NPN 14 GHz wideband transistor [1] Tsp is the temperature at the soldering point of the collector pin. 2. Pinning information 3. Ordering information 4. Marking [1] * = p: made in Hong Kong. MSG maximum stable gain IC = 5 mA; VCE =3V; f = 1.8 GHz; Tamb =25 °C -18 - dB |s21|2 insertion power gain IC = 5 mA; VCE =3V; f = 1.8 GHz; Tamb =25 °C; ZS =ZL =50 Ω -14 - dB NF noise figure Γ s = Γopt; IC = 1 mA; VCE =3V; f=2GHz -1 -dB Table 1: Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2: Pinning Pin Description Simplified outline Symbol 1 collector 2 emitter 3 base 4 emitter 21 4 3 sym086 1 2, 4 3 Table 3: Ordering information Type number Package Name Description Version BFG310W/XR - plastic surface mounted package; reverse pinning; 4 leads SOT343R Table 4: Marking codes Type number Marking code [1] BFG310W/XR A7* |
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