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BFG310W_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG310W_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 12 page 9397 750 14245 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 3 of 12 Philips Semiconductors BFG310W/XR NPN 14 GHz wideband transistor 5. Limiting values [1] Tsp is the temperature at the soldering point of the collector pin. 6. Thermal characteristics [1] Tsp is the temperature at the soldering point of the collector pin. 7. Characteristics Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 15 V VCEO collector-emitter voltage open base - 6 V VEBO emitter-base voltage open collector - 2 V IC collector current (DC) - 10 mA Ptot total power dissipation Tsp ≤ 145 °C [1] -60 mW Tstg storage temperature −65 +175 °C Tj junction temperature - 175 °C Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point Tsp ≤ 145 °C [1] 530 K/W Table 7: Characteristics Tj =25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current IE = 0 A; VCB = 6 V --15 nA hFE DC current gain IC = 5 mA; VCE = 3 V 60 100 200 CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF CCES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded - 0.22 - pF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz; collector grounded - 0.16 - pF fT transition frequency IC = 5 mA; VCE = 3 V; f = 1 GHz; Tamb =25 °C - 14 - GHz MSG maximum stable gain IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb =25 °C -18 - dB |s21|2 insertion power gain IC = 5 mA; VCE =3V; Tamb =25 °C; ZS =ZL =50 Ω f = 1.8 GHz - 14 - dB f = 3 GHz - 11 - dB NF noise figure Γs = Γopt; IC = 1 mA; VCE = 3 V; f = 2 GHz - 1 - dB PL(1dB) output power at 1 dB gain compression IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb =25 °C; ZS =ZL =50 Ω - 1.8 - dBm IP3 third order intercept point IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb =25 °C; ZS =ZL =50 Ω - 8.5 - dBm |
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