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BFG403W_2015 Datasheet(PDF) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG403W_2015 Datasheet(HTML) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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9 / 12 page  1998 Mar 11 9 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W SPICE parameters for the BFG403W die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 5.554 aA 2 BF 145.0 − 3 NF 0.993 − 4 VAF 31.12 V 5 IKF 35.75 mA 6 ISE 35.35 fA 7 NE 3.000 − 8 BR 11.37 − 9 NR 0.985 − 10 VAR 1.874 V 11 IKR 0.014 A 12 ISC 57.08 aA 13 NC 1.546 − 14 RB 122.4 Ω 15 IRB 0.000 A 16 RBM 52.45 Ω 17 RE 1.511 Ω 18 RC 15.12 Ω 19 (1) XTB 1.500 − 20 (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 36.61 fF 23 VJE 900.0 mV 24 MJE 0.346 − 25 TF 4.122 ps 26 XTF 68.20 − 27 VTF 2.004 V 28 ITF 0.179 A 29 PTF 0.000 deg 30 CJC 16.21 fF 31 VJC 556.9 mV 32 MJC 0.207 − 33 XCJC 0.500 − 34 (1) TR 00.00 ns 35 (1) CJS 78.59 fF 36 (1) VJS 418.3 mV 37 (1) MJS 0.239 − 38 FC 0.550 − Notes 1. These parameters have not been extracted, the default values are shown. 2. Bonding pad capacity Cbp in series with substrate resistance Rsb1 between B′ and E′. 3. Bonding pad capacity Cbp in series with substrate resistance Rsb2 between C′ and E′. List of components (see Fig.14) Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. 39 (2)(3) Cbp 145 fF 40 (2) Rsb1 25 Ω 41 (3) Rsb2 19 Ω DESIGNATION VALUE UNIT Cbe 80 fF Ccb 2fF Cce 80 fF L1 1.1 nH L2 1.1 nH L3 (note 1) 0.25 nH SEQUENCE No. PARAMETER VALUE UNIT QLB = 50; QLE = 50; QLB,E(f)=QLB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.14 Package equivalent circuit SOT343R2. handbook, halfpage MGD956 B E C B' C' E' L3 L1 L2 C cb Cbe ce C |
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