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BFG505_2015 Datasheet(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG505_2015 Datasheet(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
7 / 16 page 1998 Oct 02 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X Fig.11 Minimum noise figure and associated available gain as functions of frequency. VCE =6V. andbook, halfpage 5 0 1 2 5 0 −5 10 Gass (dB) 15 20 3 Fmin (dB) f (MHz) 4 MRA651 102 104 103 Gass 5 mA Fmin 5 mA 1.25 mA IC = 1.25 mA Fig.12 Noise circle figure. handbook, full pagewidth MRA652 0 0.2 0.6 0.4 0.8 1.0 1.0 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 stability circle pot. unst. region 0.5 1 5 180 ° −135° −90° −45° 0 ° 45 ° 90 ° 135 ° F = 3 dB F = 2 dB F = 1.5 dB 2 Fmin = 1. 2 dB ΓOPT Zo =50 Ω. VCE = 6 V; Ic = 1.25 mA; f = 900 MHz. |
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