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BFQ67_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFQ67_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 12 page 1998 Aug 27 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector lead. CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and . SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point note 1 260 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =5V −− 50 nA hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − Cc collector capacitance IE =ie = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 15 mA; VCE =8V − 8 − GHz GUM maximum unilateral power gain (note 1) IC = 15 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 14 − dB IC = 15 mA; VCE =8V; f=2GHz − 8 − dB F noise figure Γ s = Γopt; IC = 5 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 1.3 − dB Γ s = Γopt; IC = 15 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 5 mA; VCE =8V; Tamb =25 °C; f = 2 GHz − 2.2 − dB IC = 5 mA; VCE =8V; Tamb =25 °C; f = 2 GHz; Zs =60 Ω − 2.5 − dB Γ s = Γopt; IC = 15 mA; VCE =8V; Tamb =25 °C; f = 2 GHz − 2.7 − dB IC = 15 mA; VCE =8V; Tamb =25 °C; f = 2 GHz; Zs =60 Ω − 3 − dB G UM 10 log S 21 2 1 S 11 2 – 1 S 22 2 – -------------------------------------------------------------- dB = |
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