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MBRH30020L Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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MBRH30020L Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 20 V IF(AV) = 300 A Features • High Surge Capability D-67 Package • Type 20 V VRRM • Not ESD Sensitive Parameter MBRH30020(R)L Unit 20 V 14 V 20 V MBRH30020(R)L Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Maximum recurrent peak reverse voltage Maximum RMS voltage Conditions Symbol VRRM VRMS V Low VF Silicon Power Schottky Diode Maximum DC blocking voltage 20 V -55 to 150 °C -55 to 150 °C Parameter MBRH30020(R)L Unit 300 A 4000 A 0.58 3 200 Thermal characteristics Maximum thermal resistance, junction - case 0.28 °C/W mA V Electrical characteristics, at Tj = 25 °C, unless otherwise specified Conditions Tstg Symbol Operating temperature Storage temperature TC = 100 °C VDC Tj R ΘJC Average forward current Maximum instantaneous forward voltage Maximum instantaneous reverse current at rated DC blocking voltage IR Tj = 100 °C tp = 8.3 ms, half sine IFSM Peak forward surge current IFM = 300 A, Tj = 25 °C Tj = 25 °C IF(AV) VF Maximum DC blocking voltage www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 |
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