Features

• High Surge Capability

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT12045(R) MBRT12060(R)

Unit

Repetitive peak reverse voltage

45

60

V

RMS reverse voltage

32

42

V

DC blocking voltage

45

60

V

Silicon Power

Schottky Diode

MBRT12045 thru MBRT120100R

MBRT120100(R)

80

56

MBRT12080(R)

Conditions

100

70

100

80

DC blocking voltage

45

60

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRT12045(R) MBRT12060(R)

Unit

Average forward current (per

pkg)

120

120

A

Maximum instantaneous

forward voltage (per leg)

0.70

0.75

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.80

0.80

°C/W

A

10

10

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

Peak forward surge current

(per leg)

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

mA

V

Conditions

-55 to 150

MBRT12080(R)

0.80

0.80

0.84

0.84

30

30

120

120

800

800

800

800

-55 to 150

-55 to 150

100

80

-55 to 150

MBRT120100(R)

11

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1