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BGD885_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BGD885_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 8 page 2001 Nov 02 2 Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. DESCRIPTION Hybrid amplifier module for CATV/MATV systems operating over a frequency range of 40 to 860 MHz at a voltage supply of 24 V (DC). PINNING - SOT115D PIN DESCRIPTION 1 input 2, 3, 5, 6, 7 common 4 10 V, 200 mA supply terminal 8+VB 9 output Fig.1 Simplified outline. handbook, halfpage 7 8 9 24 6 35 1 Side view MBK049 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 16.5 17.5 dB Itot total current consumption (DC) VB = 24 V − 450 mA SYMBOL PARAMETER MIN. MAX. UNIT VB DC supply voltage − 26 V Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C |
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