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GM71C18163C-6 Datasheet(PDF) 7 Page - Hynix Semiconductor

Part # GM71C18163C-6
Description  1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

GM71C18163C-6 Datasheet(HTML) 7 Page - Hynix Semiconductor

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GM71CS18163CL
GM71C18163C
Rev 0.1 / Apr’01
Write Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
tWCS
Write Command Setup Time
0
-
0
-
tWCH
Write Command Hold Time
10
-
13
-
tWP
Write Command Pulse Width
10
-
10
-
tRWL
Write Command to RAS Lead Time
10
-
13
-
tCWL
Write Command to CAS Lead Time
10
-
-
13
tDS
Data-in Setup Time
0
-
-
0
tDH
Data-in Hold Time
10
-
-
13
15,23
15,23
14,21
GM71C(S)18163
C/CL-6
GM71C(S)18163
C/CL-7
Read- Modify-Write Cycle
Symbol
Parameter
Max
Note
Unit
Min
Max
Min
tRWC
Read-Modify-Write Cycle Time
136
-
161
-
tRWD
RAS to WE Delay Time
79
-
92
-
tCWD
CAS to WE Delay Time
34
-
40
-
tAWD
Column Address to WE Delay Time
49
-
57
-
14
14
14
tOEH
OE Hold Time from WE
15
-
18
-
GM71C(S)18163
C/CL-6
GM71C(S)18163
C/CL-7
ns
Min
0
-
7
-
7
-
-
-
0
-
-
Max
GM71C(S)18163
C/CL-5
7
7
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min
111
-
67
-
30
-
42
-
13
-
Max
GM71C(S)18163
C/CL-5
21
23
Refresh Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
tCSR
CAS Setup Time
(CAS-before-RAS Refresh Cycle)
5
-
5
-
ns
tCHR
CAS Hold Time
(CAS-before-RAS Refresh Cycle)
10
-
10
-
ns
tRPC
RAS Precharge to CAS Hold Time
5
-
5
-
ns
GM71C(S)18163
C/CL-6
GM71C(S)18163
C/CL-7
Min
5
-
7
-
5
-
GM71C(S)18163
C/CL-5
Max
21
22
21


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