Features

• High Surge Capability

Heavy Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRTA50020(R) MBRTA50030(R)

Unit

Repetitive peak reverse

voltage

20

30

V

RMS reverse voltage

14

21

V

Conditions

40

28

MBRTA50020 thru MBRTA50040R

MBRTA50040(R)

35

25

MBRTA50035(R)

Silicon Power

Schottky Diode

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRTA50020(R) MBRTA50030(R)

Unit

Average forward current

(per pkg)

500

500

A

Maximum instantaneous

forward voltage (per leg)

0.70

0.70

11

10

10

50

50

Thermal characteristics

Thermal resistance,

junction - case (per leg)

R

ΘJC

0.30

0.30

°C/W

A

500

500

Peak forward surge current

(per leg)

3500

3500

3500

3500

10

10

-55 to 150

-55 to 150

-55 to 150

MBRTA50040(R)

11

MBRTA50035(R)

0.30

0.30

40

35

0.70

0.70

50

mA

V

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated

DC blocking voltage (per

leg)

50

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