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MBRTA500200R Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # MBRTA500200R
Description  Silicon Power Schottky Diode
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MBRTA500200R Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 150 V - 200 V
IF(AV) = 500 A
Features
• High Surge Capability
Heavy Three Tower Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter
Symbol
MBRTA500150(R)
Unit
Repetitive peak reverse
voltage
VRRM
150
V
RMS reverse voltage
VRMS
106
V
Silicon Power
Schottky Diode
Conditions
MBRTA500150 thru MBRTA500200R
200
141
MBRTA500200(R)
• Isolation Type Package
• Types from 150 V to 200 V VRRM
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
DC blocking voltage
VDC
150
V
Operating temperature
Tj
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
°C
Parameter
Symbol
MBRTA500150(R)
Unit
Average forward current (per
pkg)
IF(AV)
500
A
Maximum instantaneous
forward voltage (per leg)
0.88
4
10
50
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
0.30
°C/W
Tj = 100 °C
10
-55 to 150
200
4
MBRTA500200(R)
0.30
Tj = 150 °C
0.92
50
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
IFM = 250 A, Tj = 25 °C
Conditions
-55 to 150
VF
mA
V
TC = 100 °C
500
3500
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
3500
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1


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