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MURF10005R Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # MURF10005R
Description  Silicon Super Fast Recovery Diode
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MURF10005R Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 50 V - 200 V
IF(AV) = 100 A
Features
• High Surge Capability
TO-244 Package
• Types from 50 V to 200 V VRRM
• Not ESD Sensitive
Parameter
Symbol
MURF10005(R)
MURF10010(R)
Unit
Repetitive peak reverse voltage
VRRM
50
100
V
RMS reverse voltage
VRMS
35
70
V
MURF10005 thru MURF10020R
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MURF10020(R)
200
140
Silicon Super Fast
Recovery Diode
DC blocking voltage
VDC
50
100
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
MURF10005(R)
MURF10010(R)
Unit
Average forward current (per
pkg)
IF(AV)
100
100
A
Peak forward surge current (per
leg)
IFSM
1500
1500
A
Maximum instantaneous
forward voltage (per leg)
1.0
1.0
25
25
μA
33
mA
Maximum reverse recovery time
(per leg)
Trr
75
75
nS
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
ΘJC
1.00
1.00
°C/W
-55 to 150
1.0
MURF10020(R)
3
Tj = 25 °C
1.00
75
Tj = 125 °C
IFM = 50 A, Tj = 25 °C
200
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 140 °C
100
tp = 8.3 ms, half sine
1500
VF
V
Maximum reverse current at
rated DC blocking voltage (per
leg)
IR
25
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1


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