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S6J Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # S6J
Description  Silicon Standard Recovery Diode
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

S6J Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 100 V - 600 V
IF = 6 A
Features
• High Surge Capability
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
S6B (R)
S6D (R)
Unit
Repetitive peak reverse voltage
VRRM
100
200
V
RMS reverse voltage
VRMS
70
140
V
DC blocking voltage
VDC
100
200
V
Silicon Standard
Recovery Diode
Conditions
600
420
600
400
S6B thru S6JR
S6J (R)
400
280
S6G (R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
• Types from 100 V to 600 V VRRM
2. Reverse polarity (R): Stud is anode.
DC blocking voltage
VDC
100
200
V
Continuous forward current
IF
66
A
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
S6B (R)
S6D (R)
Unit
Diode forward voltage
1.1
1.1
10
10
μA
12
12
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
2.50
2.50
°C/W
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
600
400
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
S6G (R)
2.50
VR = 100 V, Tj = 175 °C
2.50
1.1
1.1
12
VR = 100 V, Tj = 25 °C
IF = 6 A, Tj = 25 °C
TC ≤ 160 °C
Conditions
167
167
-55 to 150
66
-55 to 150
12
A
167
Reverse current
IR
VF
167
S6J (R)
10
10
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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