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BLF246B_2015 Datasheet(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BLF246B_2015 Datasheet(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 16 page 2001 Oct 10 5 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values per section. VGS = 10 V; ID = 1.5 A. handbook, halfpage 0 40 80 160 0.8 0.6 0.2 0 0.4 MGR741 120 Tj (°C) RDSon ( Ω) Fig.7 Input and output capacitance as functions of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 010 20 40 240 0 MGR742 30 180 120 60 VDS (V) C (pF) Cis Cos Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 010 20 40 24 0 MGR743 30 18 12 6 VDS (V) Crs (pF) |
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