HY57V641620HGT-KI datasheet(6/12 Pages) HYNIX

Part #	HY57V641620HGT-KI

Description	4 Banks x 1M x 16Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY57V641620HG

Rev. 1.0/Jan. 02

6

DC CHARACTERISTICS II (TA= -40 to 85°C, VDD=3.3±0.3VNote5, VSS=0V)

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

3.HY57V641620HGT-5I/55I/6I/7I/KI/HI/PI/SI

4.HY57V641620HGLT-5I/55I/6I/7I/KI/HI/PI/SI

Parameter

Symbol

Test Condition

Speed

Unit Note

-5I

-55I

-6I

-7I

-KI

-HI

-8I

-PI

-SI

Operating Current

IDD1

Burst length=1, One bank active

tRC

≥ tRC(min), IOL=0mA

100

95908585

8580

80

mA

1

Precharge Standby

Current

in Power Down Mode

IDD2P

CKE

≤ VIL(max), tCK = min

2mA

IDD2PS

CKE

≤ VIL(max), tCK =

∞

2mA

Precharge Standby

Current

in Non Power Down Mode

IDD2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK

= min

Input signals are changed one time

during 2clks. All other pins

≥ VDD-

0.2V or

≤ 0.2V

15

mA

IDD2NS

CKE

≥ VIH(min), tCK =

∞

Input signals are stable.

12

mA

Active Standby Current

in Power Down Mode

IDD3P

CKE

≤ VIL(max), tCK = min

6mA

IDD3PS

CKE

≤ VIL(max), tCK =

∞

5mA

Active Standby Current

in Non Power Down Mode

IDD3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK

= min

Input signals are changed one time

during 2clks. All other pins

≥ VDD-

0.2V or

≤ 0.2V

30

mA

IDD3NS

CKE

≥ VIH(min), tCK =

∞

Input signals are stable.

20

mA

Burst Mode Operating

Current

IDD4

tCK

≥ tCK(min), IOL=0mA

All banks active

CL=3

170

160

150

120

mA

1

CL=2

NA

120

mA

Auto Refresh Current

IDD5

tRRC

≥ tRRC(min), All banks active

160

mA

2

Self Refresh Current

IDD6

CKE

≤ 0.2V

1mA

3

400

uA

4

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