HY57V161610DTC-10 datasheet(7/13 Pages) HYNIX

Part #	HY57V161610DTC-10

Description	2 Banks x 512K x 16 Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY57V161610D

Rev. 4.0/Aug. 02

7

AC CHARACTERISTICS (TA=0°C to 70°C, VDD=3.0V to 3.6V, VSS=0VNote1,2)

Parameter

Symbol

-5

-55

-6

-7

Unit

Note

Min

Max

Min

Max

Min

Max

Min

Max

System clock

cycle time

CL=3

tCK3

5

5.5

6-7-

ns

CL=2

tCK2

-

10

-

10

-

3

CL=1

tCK1

-

----

Clock high pulse width

tCHW

1.75

2

-

2.5

-

ns

4

Clock low pulse width

tCLW

1.75

2

-

2.5

-

ns

4

Access time

from clock

CL=3

tAC3

4.5

5

-

5.5

-

6

ns

CL=2

tAC2

-

6

-

6

3

CL=1

tAC1

----

Data-out hold time

tOH

1.5

2

-

2.5

-

ns

Data-Input setup time

tDS

1.5

-

1.75

-

ns

4

Data-Input hold time

tDH

1

-

1

-

ns

4

Address setup time

tAS

1.5

-

1.75

-

ns

4

Address hold time

tAH

1

-

1

-

ns

4

CKE setup time

tCKS

1.5

-

1.75

-

ns

4

CKE hold time

tCKH

1

-

1

-

ns

4

Command setup time

tCS

1.5

-

1.75

-

ns

4

Command hold time

tCH

1

-

1

-

ns

4

CLK to data output in low Z-

time

tOLZ

2

2-2-

ns

CLK to data output in high

Z-time

tOHZ

2

5

2

5.5

2627

ns

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Manufacturer	Part #	Datasheet	Description
A-Data Technology	ADS4616A4A	530Kb / 8P	Synchronous DRAM(512K X 16 Bit X 2 Banks) Rev 1 December, 2001
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Hynix Semiconductor	HY57V161610ET-I	482Kb / 13P	2 Banks x 512K x 16 Bit Synchronous DRAM
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HY57V161610DTC-10 Datasheet(PDF) 7 Page - Hynix Semiconductor

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