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HY62256AT1-I Datasheet(PDF) 9 Page - Hynix Semiconductor |
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HY62256AT1-I Datasheet(HTML) 9 Page - Hynix Semiconductor |
9 / 9 page HYUNDAI ELECTRONICS AMERICA HY62256A-I 32K x 8bit CMOS SRAM TIMING INFORMATION TIMING DIAGRAM READ CYCLE 1 Note (READ CYCLE): 1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device and from device to device. 3. /WE is high for the read cycle. READ CYCLE 2 Note (READ CYCLE): 1. /WE is high for the read cycle. 2. Device is continuously selected /CS= VIL. 3. /OE =VIL. WRITE CYCLE 1 (/OE Clocked) 1 of 3 22/10/97 12:35 -sram/62256alt1 http://www.hea.com/hean2/sram/62256alt1.htm |
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