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IRF6604TR1 Datasheet(PDF) 2 Page - International Rectifier |
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IRF6604TR1 Datasheet(HTML) 2 Page - International Rectifier |
2 / 13 page IRF6604 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 27 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 9.0 11.5 m Ω ––– 10 13 VGS(th) Gate Threshold Voltage 1.3 ––– 2.1 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -4.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 30 µA ––– ––– 50 µA ––– ––– 100 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 38 ––– ––– S Qg Total Gate Charge ––– 17 26 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.1 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– nC Qgd Gate-to-Drain Charge ––– 6.3 ––– Qgodr Gate Charge Overdrive ––– 5.6 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 7.3 ––– Qoss Output Charge ––– 9.5 ––– nC RG Gate Resistance ––– 1.1 2.0 Ω td(on) Turn-On Delay Time ––– 11 ––– tr Rise Time ––– 4.3 ––– td(off) Turn-Off Delay Time ––– 18 ––– ns tf Fall Time ––– 25 ––– Ciss Input Capacitance ––– 2270 ––– Coss Output Capacitance ––– 420 ––– pF Crss Reverse Transfer Capacitance ––– 190 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 42 (Body Diode) A ISM Pulsed Source Current ––– ––– 92 (Body Diode) à VSD Diode Forward Voltage ––– 0.94 1.2 V trr Reverse Recovery Time ––– 31 47 ns Qrr Reverse Recovery Charge ––– 26 39 nC Max. Clamped Inductive Load 9.6 VDS = 15V, ID = 9.6A VDS = 30V, VGS = 0V VGS = 4.5V, ID = 9.6A e VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VGS = 12V VGS = -12V VDS = 24V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 7.0V, ID = 12A e MOSFET symbol Conditions TJ = 25°C, IF = 9.6A VDS = 15V 0.23 ƒ = 1.0MHz VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5VÃe di/dt = 100A/µs e TJ = 25°C, IS = 9.6A, VGS = 0V e showing the integral reverse p-n junction diode. ––– VGS = 4.5V Typ. ––– ––– ID = 9.6A VGS = 0V VDS = 15V ID = 9.6A 32 |
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