© 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1

1

December 2010

J309 / J310 / MMBFJ309 / MMBFJ310

N-Channel RF Amplifier

Features

• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.

• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.

• Sourced from Process 92.

• Source & Drain are interchangeable.

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

Symbol

Parameter

Value

Units

Drain-Source Voltage

25

V

Gate-Source Voltage

-25

V

Forward Gate Current

10

mA

Operating and Storage Junction Temperature Range

- 55 to +150

°C

Symbol

Parameter

Max.

Units

J309-J310 *MMBFJ309-310

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

127

°C/W

Thermal Resistance, Junction to Ambient

357

556

°C/W

J309

MMBFJ309

SOT-23

Mark MMBFJ309 : 6U

G

D

S

J310

MMBFJ310

MMBFJ310 : 6T

G

S

D

TO-92