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SGP13N60UFTU Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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SGP13N60UFTU Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 7 page SGP13N60UF Rev. A1 ©2002 Fairchild Semiconductor Corporation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse Rectangular Pulse Duration [sec] 1 10 100 1000 0.1 1 10 100 Safe Operating Area V GE=20V, TC=100 oC Collector-Emitter Voltage, V CE [V] Fig 14. Gate Charge Characteristics Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 13. Switching Loss vs. Collector Current Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + T C Fig 17. Transient Thermal Impedance of IGBT 02 46 8 10 12 14 5 10 100 500 Eoff Eon Eon Eoff Common Emitter V CC = 300V, VGE = ± 15V R G = 50Ω T C = 25℃ T C = 125 ℃ Collector Current, I C [A] 0 5 10 15 20 25 0 3 6 9 12 15 300 V 200 V V CC = 100 V Common Emitter R L = 46 Ω Tc = 25℃ Gate Charge, Q g [ nC ] 0.3 1 10 100 1000 0.05 0.1 1 10 100 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 50us 100us 1㎳ DC Operation IC MAX. (Continuous) IC MAX. (Pulsed) Collector-Emitter Voltage, VCE [V] |
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