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SGP13N60UFTU Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # SGP13N60UFTU
Description  Ultra-Fast IGBT
Download  7 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SGP13N60UFTU Datasheet(HTML) 5 Page - Fairchild Semiconductor

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SGP13N60UF Rev. A1
©2002 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Rectangular Pulse Duration [sec]
1
10
100
1000
0.1
1
10
100
Safe Operating Area
V
GE=20V, TC=100
oC
Collector-Emitter Voltage, V
CE [V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
02
46
8
10
12
14
5
10
100
500
Eoff
Eon
Eon
Eoff
Common Emitter
V
CC = 300V, VGE =
± 15V
R
G = 50Ω
T
C =
25℃
T
C = 125
℃
Collector Current, I
C [A]
0
5
10
15
20
25
0
3
6
9
12
15
300 V
200 V
V
CC = 100 V
Common Emitter
R
L = 46 Ω
Tc = 25℃
Gate Charge, Q
g [ nC ]
0.3
1
10
100
1000
0.05
0.1
1
10
100
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector-Emitter Voltage, VCE [V]


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