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MS5N50 Datasheet(PDF) 3 Page - Bruckewell Technology LTD |
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MS5N50 Datasheet(HTML) 3 Page - Bruckewell Technology LTD |
3 / 6 page MS5N50 N-Channel Enhancement Mode Power MOSFET Publication Order Number: [MS5N50] © Bruckewell Technology Corporation Rev. A -2014 Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units td(on) Turn-On Delay Time VDD = 250 V, ID = 4.5 A, VGS = 10 V, RG = 25 Ω -- 13 -- ns tr Rise Time -- 22 -- ns td(off) Turn-Off Delay Time -- 28 -- ns tf Fall Time -- 20 -- ns CISS Input Capacitance VGS = 0 V, VDS =25 V, f = 1MHz -- 460 -- pF COSS Output Capacitance -- 60 -- pF CRSS Reverse Transfer Capacitance -- 5 -- pF Source-Drain Diode Symbol Parameter Test Conditions Min Typ. Max. Units IS IS = 4.5 A, VGS = 0V -- -- 1.5 V ISM VD=VG=0, VS = 1.3 V -- -- 4.5 A VSD -- -- 18 A trr VGS = 0, IF = 4.5 A, dI/dt = 100A/us -- 230 -- ns Qrr -- 1.6 -- uC * Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% |
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