7.1

4

IDT61298SA

CMOS STATIC RAM 256K (64K x 4-BIT)

COMMERCIAL TEMPERATURE RANGE

DC ELECTRICAL CHARACTERISTICS

± 10%

IDT61298SA

Symbol

Parameter

Test Condition

Min.

Typ

Unit

Input Leakage Current

µA

——

5

Output Leakage Current

µA

——

5

Output Low Voltage

—

—

0.4

V

—

—

0.5

Output High Voltage

2.4

—

—

V

2971 tbl 09

± 10%)

61298SA12

61298SA15

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

Read Cycle

Read Cycle Time

12

—

15

—

ns

Address Access Time

—

12

—

15

ns

Chip Select Access Time

—

12

—

15

ns

Chip Select to Output in Low-Z

4

—

4

—

ns

Chip Deselect to Output in High-Z

—

6

—

7

ns

Output Enable to Output Valid

—

6

—

7

ns

Output Enable to Output in Low-Z

0

—

0

—

ns

Output Disable to Output in High-Z

—

6

—

6

ns

Output Hold from Address Change

3

—

3

—

ns

Chip Select to Power-Up Time

0

—

0

—

ns

Chip Deselect to Power-Down Time

—

12

—

15

ns

Write Cycle

Write Cycle Time

12

—

15

—

ns

Chip Select to End-of-Write

9

—

10

—

ns

Address Valid to End-of-Write

9

—

10

—

ns

Address Set-up Time

0

—

0

—

ns

Write Pulse Width

9

—

10

—

ns

Write Recovery Time

0

—

0

—

ns

Data Valid to End-of-Write

6

—

7

—

ns

Data Hold Time

0

—

0

—

ns

Write Enable to Output in High-Z

—

6

—

6

ns

Output Active from End-of-Write

4

—

4

—

ns

NOTES:

2971 tbl 10

1. This parameter is guaranteed with AC test load (Figure 2) by device characterization, but is not production tested.