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MS7N60 Datasheet(PDF) 2 Page - Bruckewell Technology LTD |
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MS7N60 Datasheet(HTML) 2 Page - Bruckewell Technology LTD |
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2 / 4 page  MS7N60 N-Channel Enhancement Mode Power MOSFET Publication Order Number: [MS7N60] © Bruckewell Technology Corporation Rev. A -2014 Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit TL Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds 300 °C TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds 260 °C PD Total Power Dissipation(@TC = 25 °C) 44 W Derating Factor above 25 °C 44 W 0.35 W/°C TSTG Operating and Storage Temperature -55 to +150 °C TJ Storage Temperature 150 °C Note: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C. 3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C. Thermal Characteristics Symbol Parameter Min. Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case -- -- 1.25 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- -- 62.5 Static Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0 V , ID = 250μA 600 -- -- V △BV DSS / △T J Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.60 -- V/°C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V IDSS Drain-Source Leakage Current VDS = 600 V , VGS = 0 V VDS = 480 V , TC = 125°C -- -- 1 10 uA IGSS Gate-Body Leakage, Forward VGS = ±30 -- -- ±100 nA RDS(ON) Static Drain-Source On-state Resistance VGS = -10 V , ID = 3.5 V -- 1.08 1.2 Ω Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units CISS Input Capacitance VDS=25V, VGS=0V, f=1.0MHz -- 1332 -- pF COSS Output Capacitance -- 114 -- pF CRSS Reverse Transfer Capacitance -- 61 -- pF |
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