MS7N80

800V N-Channel MOSFET

Publication Order Number: [MS7N80]

Description

The MS7N80 is a N-channel enhancement-mode

MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design,

low on-resistance and cost effectiveness. The TO-220

package is universally preferred for all

commercial-industrial applications

Features

• Originative New Design

• Very Low Intrinsic Capacitances

• Excellent Switching Characteristics

• Unrivalled Gate Charge : 37nC (Typ.)

• Extended Safe Operating Area

• 100% Avalanche Tested

• RoHS compliant package

Application

• Adapter

• Switching Mode Power Supply

Packing & Order Information

50/Tube ; 1,000/Box

Graphic symbol

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Drain Current -Continuous (TC=25°C)

7.0

A

Drain Current -Continuous (TC=100°C)

4.2

A

Drain Current Pulsed

26.5

A

Single Pulsed Avalanche Energy

580

mJ

Repetitive Avalanche Energy

16.8

mJ

dv/dt

Peak Diode Recovery dv/dt

4.5

V/ns