MS13N50

500V N-Channel MOSFET

Publication Order Number: [MS13N50]

Description

The MS13N50 is a N-channel enhancement-mode

MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design,

low on-resistance and cost effectiveness. The TO-220

package is universally preferred for all

commercial-industrial applications

Features

• Originative New Design

• Very Low Intrinsic Capacitances

• Excellent Switching Characteristics

• 100% EAS Test

• Extended Safe Operating Area

• RoHS compliant package

Application

• Electronic lamp ballasts

• based on half bridge topology

• PFC (Power Factor Correction)

• SMPS (Switched Mode Power Supplies)

Packing & Order Information

50/Tube ; 1,000/Box

Graphic symbol

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Drain Current -Continuous (TC=25°C)

13

A

Drain Current -Continuous (TC=100°C)

8

A

Drain Current

–Pulsed

52

A

Avalanche Energy

803

mJ

Repetitive Avalanche Energy

19.5

mJ

Power Dissipation (TC=25°C)

195

W

Power Dissipation (TC=100°C)

1.56

W/°C