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IDT49FCT806CTD Datasheet(PDF) 3 Page - Integrated Device Technology |
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IDT49FCT806CTD Datasheet(HTML) 3 Page - Integrated Device Technology |
3 / 7 page IDT49FCT805BT/CT, 806BT/CT FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES 9.2 3 ABSOLUTE MAXIMUM RATINGS (1) CAPACITANCE (TA = +25 °C, f = 1.0MHz) NOTE: 1. This parameter is measured at characterization but not tested. 2920 lnk 04 Symbol Parameter(1) Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 4.5 6.0 pF COUT Output Capacitance VOUT = 0V 5.5 8.0 pF Symbol Rating Commercial Military Unit VTERM(2) Terminal Voltage with Respect to GND –0.5 to +7.0 –0.5 to +7.0 V VTERM(3) Terminal Voltage with Respect to GND –0.5 to VCC +0.5 –0.5 to VCC +0.5 V TA Operating Temperature 0 to +70 –55 to +125 °C TBIAS Temperature Under Bias –55 to +125 –65 to +135 °C TSTG Storage Temperature –55 to +125 –65 to +150 °C IOUT DC Output Current –60 to +120 –60 to +120 mA 2920 lnk 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT- INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other condi- tions above those indicated in the operational sections of this specifica- tion is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals. 3. Output and I/O terminals. NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc = 5.0V, +25 °C ambient. 3. Not more than one output should be tested at one time. Duration of the test should not exceed one second. 4. Duration of the condition can not exceed one second. 5. The test limit for this parameter is ± 5µA at TA = –55°C. 2920 lnk 05 Symbol Parameter Test Conditions(1) Min. Typ.(2) Max. Unit VIH Input HIGH Level Guaranteed Logic HIGH Level 2.0 — — V VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V II H Input HIGH Current(5) VCC = Max. VI = 2.7V — — ±1 µA II L Input LOW Current(5) VCC = Max. VI = 0.5V — — ±1 µA IOZH High Impedance Output Current VCC = Max. VO = 2.7V — — ±1 µA IOZL (3-State Output pins)(5) VO = 0.5V — — ±1 µA II Input HIGH Current(5) VCC = Max., VI = VCC (Max.) — — ±1 µA VIK Clamp Diode Voltage VCC = Min., IIN= –18mA — –0.7 –1.2 V IOS Short Circuit Current VCC = Max.(3), VO = GND –60 –120 –225 mA VOH Output HIGH Voltage VCC = Min. VIN = VIH or VIL IOH = –12mA MIL. IOH = –15mA COM'L. 2.4 3.3 — V IOH = –24mA MIL. IOH = –32mA COM'L.(4) 2.0 3.0 — VOL Output LOW Voltage VCC = Min. VIN = VIH or VIL IOL = 32mA MIL. IOL = 48mA COM'L. — 0.3 0.55 V IOFF Input/Output Power Off Leakage(5) VCC = 0V, VIN or VO ≤ 4.5V — — ±1 µA VH Input Hysteresis for all inputs — — 150 — mV ICCL ICCH ICCZ Quiescent Power Supply Current VCC = Max., VIN = GND or VCC — 5 500 µA DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified Commercial: TA = 0 °C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10% |
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